MDS1652E datasheet, mosfet equivalent, MagnaChip

Features and benefits

 VDS = 30V  ID = 16A @VGS = 10V  RDS(ON) (MAX) < 5.0mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) D G S Absolute Maximum Ratings (Ta = 2.

Application

Features  VDS = 30V  ID = 16A @VGS = 10V  RDS(ON) (MAX) < 5.0mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V 5(D) 6(D) 7(D) 8(D).

Description

The MDS1652E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Excellent low RDS(ON), low gate charge and operation for Battery Applications. Featur.

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