MDP8N60 mosfet equivalent, n-channel trench mosfet.
VDS = 600V VDS = 660V ID =8.0A RDS(ON) ≤ 1.0Ω
Applications
@ Tjmax @ VGS = 10V @ VGS = 10V
Power Supply PFC High Current, High Speed Switching
Absolute Maximum Rating.
Features
VDS = 600V VDS = 660V ID =8.0A RDS(ON) ≤ 1.0Ω
Applications
@ Tjmax @ VGS = 10V @ VGS = 10V
Power Supply PF.
The MDP8N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP8N60 is suitable device for SMPS, high Speed switching and general purpose applications.
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