MDI6N60B mosfet equivalent, n-channel trench mosfet.
VDS = 600V ID = 4.5A RDS(ON) ≤ 1.45Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC Ballast
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Vo.
Features
VDS = 600V ID = 4.5A RDS(ON) ≤ 1.45Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC Ballast
Absolut.
The MDI6N60B uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDI6N60B is suitable device for SMPS, high Speed switching and general purpose applications.
Features.
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