MDI4N60B mosfet equivalent, n-channel trench mosfet.
VDS = 600V ID = 3.5A RDS(ON) ≤ 2.0Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
GDS
I-PAK (TO-251)
G
Absolute Maximu.
.
Features
VDS = 600V ID = 3.5A RDS(ON) ≤ 2.0Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, H.
The MDD/I4N60B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDD/I4N60B is suitable device for SMPS, HID and general purpose applications. .
Features
VDS = 600V.
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