MDF6N65B mosfet equivalent, n-channel trench mosfet.
VDS = 650V ID = 6.0A RDS(ON) ≤ 1.45Ω
Applications
Power Supply PFC Ballast
@VGS = 10V @VGS = 10V
TO-220F
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gat.
Features
VDS = 650V ID = 6.0A RDS(ON) ≤ 1.45Ω
Applications
Power Supply PFC Ballast
@VGS = 10V @VGS = 10V
TO-220F
A.
The MDF6N65B use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDF6N65B is suitable device for SMPS, HID and general purpose applications.
Features
VDS = 650V ID = 6.
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