MDD3N50G mosfet equivalent, n-channel mosfet.
VDS = 500V ID = 2.8A RDS(ON) ≤ 2.5Ω
Applications
Power Supply PFC Ballast
@VGS = 10V @VGS = 10V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltag.
Features
VDS = 500V ID = 2.8A RDS(ON) ≤ 2.5Ω
Applications
Power Supply PFC Ballast
@VGS = 10V @VGS = 10V
Absolute Ma.
The MDD3N50G uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDD3N50G is suitable device for SMPS, HID and general purpose applications.
Features
VDS = 500V ID = .
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