Description | MMIS60R580P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Valu... |
Features |
Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free Applications PFC Power Supply Stages Switching Applications Adapter Motor Control DC – DC Converters Ordering Information Order Code Marking MMIS60R580PTH 60R580P Temp. Range -55 ~ 150℃ Package ... |
Datasheet | 60R580P Datasheet - 1.01MB |