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MX29F1610A - 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

General Description

The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8.

The MX29F1610A includes 16-128KB(131,072) blocks or 1664KW(65,536) blocks.

MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.

Key Features

  • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 1.3 s typical Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses Status Register feature for de.

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Datasheet Details

Part number MX29F1610A
Manufacturer Macronix
File Size 666.79 KB
Description 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
Datasheet download datasheet MX29F1610A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 1.3 s typical Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle completion Low VCC write inhibit is equal to or less than 3.2V Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 0.