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MX29LV161T - 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

Features

  • Extended single - supply voltage range 2.7V to 3.6V.
  • 2,097,152 x 8/1,048,576 x 16 switchable.
  • Single power supply operation - 3.0V only operation for read, erase and program operation.
  • Fast access time: 70/90ns.
  • Low power consumption - 20mA maximum active current - 0.2uA typical standby current.
  • Command register architecture - Byte/word Programming (9us/11us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K.

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Datasheet Details

Part number MX29LV161T
Manufacturer Macronix
File Size 620.75 KB
Description 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
Datasheet download datasheet MX29LV161T Datasheet

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Other Datasheets by Macronix

Part Number Description
MX29LV161B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV160BB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV160BT 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV160CB SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV160CT SINGLE VOLTAGE 3V ONLY FLASH MEMORY

Full PDF Text Transcription

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MX29LV161T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 70/90ns • Low power consumption - 20mA maximum active current - 0.2uA typical standby current • Command register architecture - Byte/word Programming (9us/11us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x31) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability.
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