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MMN550WB025B - MOSFET

Features

  • ƶ Proprietary New Trench Technology ƶ RDS(ON). typ=1.5mȍ@VGS=10V ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery Schottky Diode ƶ10K ȍ Gate Protected Resistance Inside ƶ Inside the module,each MOSFET chip has a gate resistance:10ȍ.

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Datasheet Details

Part number MMN550WB025B
Manufacturer MacMic
File Size 220.62 KB
Description MOSFET
Datasheet download datasheet MMN550WB025B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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July 2016 Preliminary MMN550WB025B 250V 550A MOSFET Module RoHS Compliant PRODUCT FEATURES ƶ Proprietary New Trench Technology ƶ RDS(ON).typ=1.5mȍ@VGS=10V ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery Schottky Diode ƶ10K ȍ Gate Protected Resistance Inside ƶ Inside the module,each MOSFET chip has a gate resistance:10ȍ APPLICATIONS ƶ High efficiency DC/DC Converters ƶ ISG EV Products ƶ UPS inverter Type MMN550WB025B VDS 250V ID 550A RDS(ON).max TJ=25ć 1.
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