* Q1: N-Channel 7 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 40 mΩ @ VGS = 4.5V
* Q2: P-Channel
  –7 A,
  –30 V RDS(on) = 25 .

* DC/DC converter
* Power management Features
* Q1: N-Channel 7 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(.

This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications
* D.

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