MT6680 mosfet equivalent, n-channel power mosfet.
* Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A
* HBM ESD protection level of 3KV typical (note 3)
* High perform.
common in Notebook Computers and Portable Battery Packs.
D D D
D
SO-8
Pin 1
G
S S S
D D D D
G S S S
MOSFET Maxim.
This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power mosfet process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications comm.
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