* RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A
* Fast switching speed
* Low gate charge
* High performance trench technology for extremely low RDS(on)

This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application
* DC to DC convertors.

MT301

MT30210

MT30310

MT30320

MT30330

MT3040

MT3055L

MT30N03

MT3103-Y

MT3108

MT3116

MT3118-Y

MT3118-Y-A

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