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MOS-TECH

MT3400 Datasheet Preview

MT3400 Datasheet

N-Channel Power MOSFET

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MOS-TECH Semiconductor Co.,LTD
1RYHPEHU 20
07
N-Channel PowerMOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using 0RVWHFK’s Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D
Features
 A, 30 V. RDS(ON)= 0.0 @ VGS = 10 V
RDS(ON)= 0.06 @ VGS = 4.5 V
Very fast switching speed.
Low gate charge (5nC typical)
High performance version of industry standard
SOT-23 package. Identical pin out to SOT-23 with 30%
higher power handling capability.
D
SuperSOTTM-3
G
S
GS
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
(Note 1a)
– Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Temperature Range
Ratings
30
±20
.
1
.5
0.6
55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a) 0 °C/W
(Note 1) 75 °C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
$;; ;;
07
7’’
Tape width
8mm
Quantity
3000 units
©20 0267(&+ Semiconductor Corporation
ZZZPWVHPLFRP




MOS-TECH

MT3400 Datasheet Preview

MT3400 Datasheet

N-Channel Power MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 24 V,
VGS = ±20 V,
VGS = 0 V
TJ = -55OC
VDS = 0 V
30
V
21 mV/°C
1
10
±100
µA
µA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA 
ID = 250 µA,Referenced to 25°C

–4
VGS = 10 V,
ID = 2.7 A
VGS = 4.5 V, ID = 2.4 A
VGS = 10 V, ID = 2.7 A, TJ = 125°C
VGS = 10 V,
VDS = 5 V
VDS = 5V,
ID = 2.7 A
0.0
0.0
0.03
1

 V
mV/°C
0.0
0.06
0.075
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
f = 1.0 MHz
 
 
 
1.8
pF
pF
pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD=15V,ID=1A,
VGS = 10 V,
RGEN = 6
5 
ns
ns
20 
ns
  ns
VDS = 15 V,
ID = 2.7 A,

VGS=5V.
nC
nC
1. nC
07 Rev %(:)


Part Number MT3400
Description N-Channel Power MOSFET
Maker MOS-TECH
Total Page 9 Pages
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