MT3206A mosfet equivalent, n-channel power mosfet.
* 50A, 60V, RDS(on) = 11.2mΩ @VGS = 10 V
* Low gate charge ( typical 43 nC)
* Low Crss ( typical 85 pF)
* Fast switching
* 100% avalanche tested
*.
such as automotive, DC/ DC conver ters, and high ef ficiency swit ching f or power management in portable and battery op.
These N-Channel enhancem ent m ode power field effect transistors ar e produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-st ate resist ance, provide superior s.
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