MT2030 datasheet, mosfet equivalent, MOS-TECH

Features and benefits

* Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 12 A
* Max rDS(on) = 24.5 mΩ at VGS = 4.5 V, ID = 10 A
* High performance technology for extremely low rDS(on)

Application

common in Notebook Computers and Portable Battery Packs. Applications
* DC/DC Buck Converters
* Notebook battery.

Description

This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced Power® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in N.

Image gallery