MT19N10 mosfet equivalent, n-channel powe mosfet.
* 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V
* Low gate charge ( typical 14 nC)
* Low Crss ( typical 35 pF)
* Fast switching
* 100% avalanche tested
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such as high efficiency switching DC/DC converters, and DC motor control.
Features
* 15.6A, 100V, RDS(on) = 0.1Ω @V.
These N-Channel enhancement mode power f ield effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-state resistance, provide superior swit .
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