MSP0330D mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage.
Image gallery
TAGS
Download (Size : 540.00KB)