MSN6004F fet equivalent, 600v(d-s) n-channel enhancement mode power mos fet.
* VDS =600V,ID =4A RDS(ON) <2.4 Ω @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stab.
Image gallery
TAGS
Download (Size : 589.12KB)