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MSN0360D
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Lead Free
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0360D
MSN0360D
TO-252-2L
Reel Size -
Tape width -
Quantity 2500 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Pa
MSN0360D Datasheet
