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MT28GU512AAA2EGC-0SIT - StrataFlash Embedded Memory

Download the MT28GU512AAA2EGC-0SIT datasheet PDF. This datasheet also covers the MT28GU256AAA1EGC-0SIT variant, as both devices belong to the same strataflash embedded memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • Micron StrataFlash Embedded Memory MT28GU256AAA1EGC-0SIT, MT28GU256AAA2EGC-0SIT MT28GU512AAA1EGC-0SIT, MT28GU512AAA2EGC-0SIT, MT28GU01GAAA1EGC-0SIT, MT28GU01GAAA2EGC-0SIT Features.
  • High-performance read, program, and erase.
  • 96ns initial read access.
  • 108 MHz with zero wait-state synchronous burst reads: 7ns clock-to-data output.
  • 133 MHz with zero wait-state synchronous burst reads: 5.5ns clock-to-data output.
  • 8-, 16-, and continuous-word synchronous-b.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT28GU256AAA1EGC-0SIT-MICRON.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
256Mb, 512Mb, 1Gb StrataFlash Memory Features Micron StrataFlash Embedded Memory MT28GU256AAA1EGC-0SIT, MT28GU256AAA2EGC-0SIT MT28GU512AAA1EGC-0SIT, MT28GU512AAA2EGC-0SIT, MT28GU01GAAA1EGC-0SIT, MT28GU01GAAA2EGC-0SIT Features • High-performance read, program, and erase – 96ns initial read access – 108 MHz with zero wait-state synchronous burst reads: 7ns clock-to-data output – 133 MHz with zero wait-state synchronous burst reads: 5.5ns clock-to-data output – 8-, 16-, and continuous-word synchronous-burst reads – Programmable WAIT configuration – Customer-configurable output driver impedance – Buffered Programming: 2.0 μs/Word (TYP), 512Mb, 65nm – Block erase: 0.
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