MT28C3212P2 Datasheet | Micron Technology

2 MEG x 16 PAGE FLASH 128K x 16 SRAM BO MEMORY FLASH AND SRAM BO MEMORY Features - Flexible dual-bank architecture - Support for true concurrent operations with no latency: Read bank b during program bank a and vice versa Read bank b during erase bank a and vice versa - Organization: 2,048K x 16 (Flash) 128K x 16 (SRAM) - Basic configuration: Flash Bank a (4Mb Flash for data storage) - Eight 4K-word parameter blocks - Seven 32K-word blocks Bank b (28Mb Flash for program storage) - Fifty-six 32K-word main blocks SRAM 2Mb SRAM for data storage - 128K-words - F_VCC, VCCQ, F_VPP, S_VCC voltages1 1.65V (MIN)/1.95V (MAX) F_VCC read voltage or 1.80V (MIN)/2.20V (MAX) F_VCC read voltage 1.65V (MIN)/1.95V (MAX) S_VCC read voltage or 1.80V (MIN)/2.20V (MAX) S_VCC read voltage 1.65V (MIN)/1.95V (MAX) VCCQ or 1.80V (MIN)/2.20V (MAX) VCCQ 1.80V (TYP) F_VPP (in-system PROGRAM/ERASE) 0.0V (MIN)/2.20V (MAX) F_VPP (in-system PROGRAM/ERASE) 2 12V ±5% (HV) F_VPP (production programming patibility) - Asynchronous access time1 Flash access time: 100ns or 110ns @ 1.65V F_VCC SRAM access time: 100ns @ 1.65V S_VCC - Page Mode read access1 Interpage read access: 100ns/110ns @ 1.65V F_VCC Intrapage read access: 35ns/45ns @ 1.65V F_VCC - Low power consumption - Enhanced suspend options ERASE-SUSPEND-to-READ within same bank PROGRAM-SUSPEND-to-READ within same bank ERASE-SUSPEND-to-PROGRAM within same bank - Read/Write SRAM during program/erase of Flash - Dual 64-bit chip protection registers for security purposes - PROGRAM/ERASE cycles 100,000 WRITE/ERASE cycles per block MT28C3212P2FL MT28C3212P2NFL Low Voltage, Extended Temperature BALL ASSIGNMENT 66-Ball FBGA (Top View) 1 A B C D E F G H NC NC...