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MCC

MPSA55 Datasheet Preview

MPSA55 Datasheet

PNP Silicon Amplifier Transistor

No Preview Available !

MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
Halogen free available upon request by adding suffix "-HF"
Capable of 1.5Watts of Power Dissipation.
Collector-current 500mA
Collector-base Voltage 80V
Operating and storage junction temperature range: -55OC to +150OC
x Marking:MPSA55,MPSA56
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation @TA=25OC
Derate above 25OC
Total Device Dissipation @TC=25OC
Derate above 25OC
Junction Temperature
Storage Temperature
Rating
80
80
4.0
500
625
5.0
1.5
12
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
mW/ OC
W
mW/ OC
OC
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage(1)
(IC=1.0mAdc, IB=0)
MPSA55
MPSA56
V(BR)EBO
ICES
ICBO
Emitter-Base Breakdown Voltage
(IE=100μAdc, IC=0)
Collector Cutoff Current
(VCE=60Vdc, IB=0)
Collector Cutoff Current
(VCB=60Vdc, IE=0)
(VCB=80Vdc, IE=0)
MPSA55
MPSA56
ON CHARACTERISTICS (1)
60
80
4.0
Vdc
Vdc
0.1 μAdc
0.1 μAdc
0.1
hFE(1)
hFE(2)
VCE(sat)
VBE(on)
DC Current Gain
(IC=10mAdc, VCE=1.0Vdc)
DC Current Gain
(IC=100mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
Base-Emitter Saturation Voltage
(IC=100mAdc, VCE=1.0Vdc)
100
100
0.25 Vdc
1.2 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current-Gain – Bandwidth Product(3)
(IC=100mAdc, VCE=1.0Vdc,
f=100MHz)
MPSA55
50
MHz
MPSA56
1. Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
MPSA55
MPSA56
PNP Silicon
Amplifier Transistor
TO-92
A
E
B
C
D
E
BC
E
BC
STRAIGHT LEAD BENT LEAD
G BULK PACK AMMO PACK
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.45 4.70
C .500
--- 12.70
---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G
.095
.173
.105 2.42 2.67 Straight Lead
.220 4.40 5.60 Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
Revision: F
www.mccsemi.com
1 of 4
2015/04/15




MCC

MPSA55 Datasheet Preview

MPSA55 Datasheet

PNP Silicon Amplifier Transistor

No Preview Available !

Typical Characterisitics
-140
-120
-100
-80
-60
-40
-20
-0
-0.0
-2000
Static Characteristic
IB=-800μA
IB= -720μA
IB=-640μA
IB= - 560μA
COMMON
EMITTER
Ta=25
IB=-480μA
IB=-400μA
IB= -320μA
IB=-240μA
IB=-160μA
IB= -80μA
-0.5 -1.0 -1.5 -2.0 -2.5 -3.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
V ——
BEsat
I
C
-3.5
-1000
Ta=25
Ta=100
500
100
10
-1
-1000
-100
-100
-1
-10 -100
COLLECTOR CURRENT IC (mA)
β=10
-500
-10
-1
MCC
TM
Micro Commercial Components
h
FE
——
I
C
Ta=100
Ta=25
VCE=-1V
-10 -100
COLLECTOR CURRENT IC (mA)
V ——
CEsat
I
C
-500
Ta=100
Ta=25
-10 -100
COLLECTOR CURRENT IC (mA)
β=10
-500
Revision: F
www.mccsemi.com
2 of 4
2015/04/15


Part Number MPSA55
Description PNP Silicon Amplifier Transistor
Maker MCC
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MPSA55 Datasheet PDF






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