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MCC

MPSA42 Datasheet Preview

MPSA42 Datasheet

NPN Silicon High Voltage Transistor

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MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
Through Hole Package
150oC Junction Temperature
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Mechanical Data
Case: TO-92, Molded Plastic
Marking:
MPSA42 ----A42
MPSA43 ----MPSA43
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Symbol
Collector-Emitter Voltage MPSA42
MPSA43
VCEO
Collector-Base Voltage
MPSA42
MPSA43
VCBO
Emitter-Base Voltage
MPSA42
MPSA43
VEBO
Value
300
200
300
200
5.0
Unit
V
V
V
Collector Current(DC)
Power Dissipation@TA=25oC
Power Dissipation@TC=25oC
Thermal Resistance, Junction to
Ambient Air
IC 300 mA
Pd
625 mW
5.0 mW/oC
Pd
1.5 W
12 mW/oC
R JA
200 oC/W
Thermal Resistance, Junction to
Case
R JC
83.3 oC/W
Operating & Storage Temperature Tj, TSTG -55~150 oC
MPSA42
THRU
MPSA43
NPN Silicon High
Voltage Transistor
625mW
TO-92
A
E
B
C
D
E
G BC
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C .550 .590 13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
www.mccsemi.com
1 of 4
2011/01/01
Free Datasheet http://www.datasheet4u.com/




MCC

MPSA42 Datasheet Preview

MPSA42 Datasheet

NPN Silicon High Voltage Transistor

No Preview Available !

MPSA42 thru MPSA43
MCC
TM
Micro Commercial Components
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
MPSA42
MPSA43
Collector – Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
MPSA42
MPSA43
Emitter – Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
MPSA42
MPSA43
MPSA42
MPSA43
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
Collector – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
MPSA42
MPSA43
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5 Vdc, f = 30MHz)
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
MPSA42
MPSA43
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
300
200
300
200
5.0
ICBO
IEBO
Max
0.25
0.1
0.25
0.1
hFE
VCE(sat)
VBE(sat)
25
80
25
0.5
0.4
0.9
fT 50
Ccb
3.0
4.0
Unit
Vdc
Vdc
Vdc
µAdc
µAdc
250
Vdc
Vdc
MHz
pF
Revision: A
www.mccsemi.com
2 of 4
2011/01/01
Free Datasheet http://www.datasheet4u.com/


Part Number MPSA42
Description NPN Silicon High Voltage Transistor
Maker MCC
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MPSA42 Datasheet PDF






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