MT2301 datasheet, mosfet equivalent, MATRIX MICROTECH

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Features and benefits

APPLICATIONS ¾ -20V/-2.8A, RDS(ON) = 120mΩ @ VGS = -4.5V ¾ -20V/-2.5A, RDS(ON) = 170mΩ @ VGS = -2.5V ¾ Super high density cell design for extremely low RDS(ON) ¾ Exce.

Application

¾ -20V/-2.8A, RDS(ON) = 120mΩ @ VGS = -4.5V ¾ -20V/-2.5A, RDS(ON) = 170mΩ @ VGS = -2.5V ¾ Super high density cell desig.

Description

MT2301 P- Channel Enhancement Mode MOSFET The MT2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize o.

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