MX25R1035F Datasheet | Macronix

Features - Wide Range 1.7 to 3.6 volt for read, erase, and program operations - Multi I/O Support - Single I/O, Dual I/O and Quad I/O - Program Suspend/Resume & Erase Suspend/Resume - Low Power Mode and High Performance Mode P/N: PM2218 REV. 0.00, JAN. 12, 2015 1 ADVANCED INFORMATION MX25R1035F 1. FEATURES Wide Vcc Range 1M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY GENERAL - Supports Serial Peripheral Interface -- Mode 0 and Mode 3 - 1,048,576 x 1 bit structure or 524,288 x 2 bits (two I/O mode) structure or 262,144 x 4 bits (four I/O mode) structure - Equal Sectors with 4K byte each, or Equal Blocks with 32K/64K byte each - Any Block can be erased individually - Single Power Supply Operation - 1.7 to 3.6 volt for read, erase, and program operations - Latch-up protected to 100m A from -1V to Vcc +1V PERFORMANCE - High Performance - Fast read - 1 I/O: 80MHz with 8 dummy cycles - 2 I/O: 80MHz with 4 dummy cycles, equivalent to 160MHz - 4 I/O: 80MHz with 2+4 dummy cycles, equivalent to 320MHz - Fast program and erase time - 8/16/32/64 byte Wrap-Around Burst Read Mode - Low Power Consumption - Typical 100,000 erase/program cycles - 20 years data retention SOFTWARE FEATURES - Input Data Format - 1-byte mand code - Advanced Security Features - Block lock protection The BP0-BP3 status bit defines the size of the area to be software protection against program and erase instructions - Additional 8K bits secured OTP - Features unique identifier. - Factory locked identifiable and customer lockable - Auto Erase and Auto Program Algorithm - Automatically erases and verifies data at selected sector or...