WS1A2639
Description
The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology.
Key Features
- GaN on SiC technology
- Frequency: 2496-2690 MHz
- Average Output Power : 6 to 8 W maximum
- PSAT = 48 dBm
- RF inputs matched to 50 Ω and DC matched
- Gate bias supply for main and peak sides available from either side of device
- Integrated harmonic terminations
