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WS1A2639 - GaN on SiC Power Amplifier

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General Description

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology.

The WS1A2639 has been designed to operate from 2496 MHz to 2690 MHz supply voltages of up to 50 V at average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz.

The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

Overview

WS1A2639 GaN on SiC Power Amplifier Module for 5G.

Key Features

  • GaN on SiC technology.
  • Frequency: 2496-2690 MHz.
  • Average Output Power : 6 to 8 W maximum.
  • PSAT = 48 dBm.
  • RF inputs matched to 50 Ω and DC matched.
  • Gate bias supply for main and peak sides available from either side of device.
  • Integrated harmonic terminations.
  • Pb-free and RoHS compliant WS1A2639 Package PG-LGA-6x6-3-1 Typical Broadband Performance Single-carrier LTE Performance (tested in the.

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