PXAD184218FV fet equivalent, 420w high power rf ldmos fet.
include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanded LDMOS process, this devi.
in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and ther.
The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching.
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