Datasheet4U Logo Datasheet4U.com

PTRA095908NB Datasheet Thermally-Enhanced High Power RF LDMOS FET

Manufacturer: MACOM Technology Solutions

General Description

The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band.

Overview

PTRA095908NB Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 – 960.

Key Features

  • include input and output matching, high gain and thermally-enhanced plastic overmold package with earless flange. Package Types: PG-HB2SOF-6-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 500 mA, VGS(PEAK) = 2.10 V, ƒ = 960 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Efficiency 20 40 Gain 16 20 12 0 8 PAR @ 0.01% CCDF -20 4 -40 0 ptra09590nb-gr1a -60 25 30 35 40 45 50 55 Average Output Power (dBm) Featur.