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CMPA5259025F - GaN MMIC

General Description

The CMPA5259025F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz radar amplifier applicatio

Key Features

  • 30 dB small signal gain.
  • 50% efficiency at PSAT Operation up to 28 V.
  • High breakdown voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMPA5259025F 25 W, 5.2 – 5.9 GHz, 28 V, GaN MMIC for Radar Power Amplifiers Description The CMPA5259025F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Types: 440219 PN's: CMPA5259025F Features • 30 dB small signal gain • • 50% efficiency at PSAT Operation up to 28 V • High breakdown voltage Applications • Radar Typical Performance Over 5.2 - 5.9 GHz (TC = 25 °C) of Demonstration Amplifier Parameter Small Signal Gain Output Power1 Efficiency1 5.2 GHz 33.6 38.5 53.5 5.