CMPA5259025F mmic equivalent, gan mmic.
* 30 dB small signal gain
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50% efficiency at PSAT Operation up to 28 V
* High breakdown voltage
Applications
* Radar
Typical Performance Over.
The transistor is supplied in a ceramic/metal flange package.
Package Types: 440219 PN's: CMPA5259025F
Features
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The CMPA5259025F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F .
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