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CMPA0530002S - GaN MMIC

Description

The CMPA0530002S is a packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

The MMIC power amplifier is matched to 50-ohms on the input.

Features

  • for 28 V in CMPA0530002S-AMP.
  • 18 dB Small Signal Gain.
  • 2.9 W Typical PSAT.
  • Operation up to 28 V.
  • High Breakdown Voltage.
  • High Temperature Operation.
  • Size 0.118 x 0.157 x 0.033 inches.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMPA0530002S 2 W, 0.5 - 3.0 GHz, 28 V, GaN MMIC Description The CMPA0530002S is a packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). The MMIC power amplifier is matched to 50-ohms on the input. The CMPA0530002S operates on a 28 volt rail while housed in a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 28V to as low as 20V VDD; maintaining high gain and efficiency. Package Type: 3x4 DFN PN: CMPA0530002S Typical Performance Over 0.5 - 3.0 GHz (TC = 25ºC), 28 V Parameter Small Signal Gain Output Power1 Power Gain1 Power Added Efficiency1 0.5 GHz 18.10 2.85 13.05 56.0 1.0 GHz 17.90 2.80 12.97 48.7 1.5 GHz 18.30 2.99 13.26 56.2 2.0 GHz 17.90 2.