CGHV50200F GaN HEMT

MACOM

CGHV50200F Description

CGHV50200F 200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT .
The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide band.

CGHV50200F Features

* 4.4 - 5.0 GHz Operation
* 180 W Typical PSAT
* 11.5 dB Typical Power Gain
* 48% Typical Power Efficiency

📥 Download Datasheet

CGHV50200F Datasheet Preview — Preview of CGHV50200F PDF

Datasheet Details

Part number: CGHV50200F
Manufacturer: MACOM
File Size: 1.29 MB
Datasheet: CGHV50200F-MACOM.pdf
Description: GaN HEMT

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GaN HEMT MACOM

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