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CGHV50200F Datasheet, MACOM

CGHV50200F hemt equivalent, gan hemt.

CGHV50200F Avg. rating / M : 1.0 rating-12

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CGHV50200F Datasheet

Features and benefits


* 4.4 - 5.0 GHz Operation
* 180 W Typical PSAT
* 11.5 dB Typical Power Gain
* 48% Typical Power Efficiency
* 50 Ohm Internally Matched Applications <.

Application

and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use. It is designed for CW, pulse, and linear m.

Description

The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz .

Image gallery

CGHV50200F Page 1 CGHV50200F Page 2 CGHV50200F Page 3

TAGS

CGHV50200F
GaN
HEMT
MACOM

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