| Part Number | CGHV50200F |
| Manufacturer | MACOM |
| Title | GaN HEMT |
| Description | The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide ... |
| Features |
• 4.4 - 5.0 GHz Operation • 180 W Typical PSAT • 11.5 dB Typical Power Gain • 48% Typical Power Efficiency • 50 Ohm Internally Matched Applications • Troposcatter Communications • Beyond Line of Sight – BLOS • Satellite Communications Typical Perfo... |
| Datasheet |
 CGHV50200F Datasheet 1.29MB |
