CGHV35120F datasheet, hemt equivalent, MACOM

Features and benefits

* Rated Power = 120 W @ TCASE = 85°C
* Operating Frequency = 2.9 - 3.8 GHz
* Transient 100 μsec - 300 μsec @ 20% Duty Cycle
* 13 dB Power Gain @ TCASE = 8.

Application

The transistor is supplied in a ceramic/metal flange package. PN: 440162 Package Type: CGHV35120F Typical Performance.

Description

The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applica.

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