CGHV35120F
Description
The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Key Features
- Rated Power = 120 W @ TCASE = 85°C
- Operating Frequency = 2.9 - 3.8 GHz
- Transient 100 μsec
- 300 μsec @ 20% Duty Cycle
- 13 dB Power Gain @ TCASE = 85°C
- 62% Typical Drain Efficiency @ TCASE = 85°C
- Input Matched
