CGHV35120F - GaN HEMT

Product Overview

MACOM

Datasheet Details

Part number	CGHV35120F
Manufacturer	MACOM
File Size	532.15 KB
Description	GaN HEMT
Datasheet	CGHV35120F Datasheet
Additional preview pages of the CGHV35120F datasheet.

Product details

Description

The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications.

Features

Rated Power = 120 W @ TCASE = 85°C.
Operating Frequency = 2.9 - 3.8 GHz.
Transient 100 μsec - 300 μsec @ 20% Duty Cycle.
13 dB Power Gain @ TCASE = 85°C.
62% Typical Drain Efficiency @ TCASE = 85°C.
Input Matched.

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Published: May 13, 2024 |