| Part Number | CGHV35120F |
| Manufacturer | MACOM |
| Title | GaN HEMT |
| Description | The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide b... |
| Features |
• Rated Power = 120 W @ TCASE = 85°C • Operating Frequency = 2.9 - 3.8 GHz • Transient 100 μsec - 300 μsec @ 20% Duty Cycle • 13 dB Power Gain @ TCASE = 85°C • 62% Typical Drain Efficiency @ TCASE = 85°C • Input Matched • <0.3 dB Pulsed Amplitude Dr... |
| Datasheet |
 CGHV35120F Datasheet 532.15KB |
