logo

CGHV35120F Datasheet, MACOM

CGHV35120F hemt equivalent, gan hemt.

CGHV35120F Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 532.15KB)

CGHV35120F Datasheet

Features and benefits


* Rated Power = 120 W @ TCASE = 85°C
* Operating Frequency = 2.9 - 3.8 GHz
* Transient 100 μsec - 300 μsec @ 20% Duty Cycle
* 13 dB Power Gain @ TCASE = 8.

Application

The transistor is supplied in a ceramic/metal flange package. PN: 440162 Package Type: CGHV35120F Typical Performance.

Description

The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applica.

Image gallery

CGHV35120F Page 1 CGHV35120F Page 2 CGHV35120F Page 3

TAGS

CGHV35120F
GaN
HEMT
MACOM

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts