Part Number | CGHV35120F |
Manufacturer | MACOM |
Title | GaN HEMT |
Description | The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide b... |
Features |
• Rated Power = 120 W @ TCASE = 85°C • Operating Frequency = 2.9 - 3.8 GHz • Transient 100 μsec - 300 μsec @ 20% Duty Cycle • 13 dB Power Gain @ TCASE = 85°C • 62% Typical Drain Efficiency @ TCASE = 85°C • Input Matched • <0.3 dB Pulsed Amplitude Dr... |
Datasheet |
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