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CGHV31500F1 Datasheet, MACOM

CGHV31500F1 hpa equivalent, 500w gan hpa.

CGHV31500F1 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 655.61KB)

CGHV31500F1 Datasheet
CGHV31500F1
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 655.61KB)

CGHV31500F1 Datasheet

Features and benefits


* Psat: 500 W
* DE: 60 %
* LSG: 11 dB
* S21: 13 dB
* S11: -5 dB
* S22: -6 dB
* Long pulse operation Note: Features are typical performance und.

Application

The CGHV31500F1 typically achieves 500 W of saturated output power with 11 dB of large signal gain and 60% drain effici.

Description

The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output ports. Utilizing the high performance, 0.4um GaN on SiC production process, the CGHV31500F1 operates from 2.7 to 3.1 GHz and supports both defense and com.

Image gallery

CGHV31500F1 Page 1 CGHV31500F1 Page 2 CGHV31500F1 Page 3

TAGS

CGHV31500F1
500W
GaN
HPA
MACOM

Manufacturer


MACOM

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