CGHV31500F1
CGHV31500F1 is 500W GaN HPA manufactured by MACOM Technology Solutions.
- 3.1 GHz, 500 W Ga N HPA
Description
The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output ports. Utilizing the high performance, 0.4um Ga N on Si C production process, the CGHV31500F1 operates from 2.7 to 3.1 GHz and supports both defense and mercial-related s-band radar applications. The CGHV31500F1 typically achieves 500 W of saturated output power with 11 d B of large signal gain and 60% drain efficiency under long pulse operation.
Packaged in a thermally-enhanced, flange package, the CGHV31500F1 provides superior performance under long pulse operation allowing customers to improve SWa P-C benchmarks in their next-generation systems.
Figure 1. CGHV31500F1
Figure 2. Functional Block Diagram
Features
- Psat: 500 W
- DE: 60 %
- LSG: 11 d B
- S21: 13 d B
- S11: -5 d B
- S22: -6 d B
- Long pulse operation
Note: Features are typical performance under 25°C, pulsed operation. Please reference performance charts for additional information.
Applications
- S-band Radar
MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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Rev. 1.2
- September 2023 https://.ma./support
- Specifications
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