CGHV31500F1 hpa equivalent, 500w gan hpa.
* Psat: 500 W
* DE: 60 %
* LSG: 11 dB
* S21: 13 dB
* S11: -5 dB
* S22: -6 dB
* Long pulse operation
Note: Features are typical performance und.
The CGHV31500F1 typically achieves 500 W of saturated output power with 11 dB of large signal gain and 60% drain effici.
The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output ports. Utilizing the high performance, 0.4um GaN on SiC production process, the CGHV31500F1 operates from 2.7 to 3.1 GHz and supports both defense and com.
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