logo

CG2H30070F Datasheet, MACOM

CG2H30070F hemt equivalent, rf power gan hemt.

CG2H30070F Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.23MB)

CG2H30070F Datasheet

Features and benefits


* 0.5 - 3.0 GHz application circuit
* 85 W POUT typical at 28 V
* 10 dB power gain
* 58% drain efficiency
* Internally matched Applications
* Bro.

Application

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H30070F ideal for linear and c.

Description

The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEM.

Image gallery

CG2H30070F Page 1 CG2H30070F Page 2 CG2H30070F Page 3

TAGS

CG2H30070F
Power
GaN
HEMT
MACOM

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts