CG2H30070F hemt equivalent, rf power gan hemt.
* 0.5 - 3.0 GHz application circuit
* 85 W POUT typical at 28 V
* 10 dB power gain
* 58% drain efficiency
* Internally matched
Applications
* Bro.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H30070F ideal for linear and c.
The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEM.
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