Download the XP1005-BD datasheet PDF.
This datasheet also covers the XP1005-BD-MA variant, as both devices belong to the same power amplifier family and are provided as variant models within a single manufacturer datasheet.
General Description
M/A-COM Tech’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power.
The device also includes Lange couplers to achieve good output return loss.
Key Features
Excellent Saturated Output Stage.
Balanced Design Provides Good Output Match.
26.0 dB Small Signal Gain.
+24.0 dBm Saturated Output Power.
100% On-Wafer RF, DC and Output Power
Testing.
100% Commercial-Level Visual Inspection Using
Mil-Std-883 Method 2010.
Full PDF Text Transcription for XP1005-BD (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
XP1005-BD. For precise diagrams, and layout, please refer to the original PDF.
XP1005-BD Power Amplifier 35.0-43.0 GHz Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm S...
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n Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010 RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and
XP1005-BD Datasheet
