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NPA1007 - GaN on Silicon Power Amplifier

Download the NPA1007 datasheet PDF. This datasheet also covers the NPA1007-MA variant, as both devices belong to the same gan on silicon power amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

The NPA1007 is a GaN on silicon power amplifier optimized for 20 - 2500 MHz operation.

This amplifier has been designed for saturated and linear operation and it is assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package.

Features

  • GaN on Si HEMT D-Mode Amplifier.
  • Suitable for Linear & Saturated.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NPA1007-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NPA1007 GaN on Silicon Power Amplifier 20 - 2500 MHz, 28 V, 10 W Features  GaN on Si HEMT D-Mode Amplifier  Suitable for Linear & Saturated Applications  Broadband Operation from 20 - 2500 MHz  28 V Operation  12.5 dB Gain @ 2500 MHz  43% Drain Efficiency @ 2500 MHz  100% RF Tested  Fully Matched at Input, Unmatched at Output  Lead-Free 6 x 5 mm 8-lead PDFN Package  Halogen-Free “Green” Mold Compound  RoHS* Compliant Description The NPA1007 is a GaN on silicon power amplifier optimized for 20 - 2500 MHz operation. This amplifier has been designed for saturated and linear operation and it is assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package.
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