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MSWSHC-040-40 - PIN Diode Shunt Switch Element

Download the MSWSHC-040-40 datasheet PDF. This datasheet also covers the MSWSHC-040-40-MA variant, as both devices belong to the same pin diode shunt switch element family and are provided as variant models within a single manufacturer datasheet.

General Description

A broadband, high linearity, medium power shunt switch element in a 2.6 x 1.5 mm DFN package.

This PIN diode switch element is designed for wireless telecommunications infrastructure and test instrument applications.

It is also suited for other applications in 0.05 ~ 10 GHz.

Key Features

  • Supports up to 40 W Power.
  • Low Insertion Loss: 0.2 dB @ 2.7 GHz 0.4 dB @ 8.0 GHz.
  • High Isolation: 55 dB to 2.7 GHz.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSWSHC-040-40-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MSWSHC-040-40 PIN DIODE SWITCH ELEMENT Aeroflex
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MSWSH-100-30 PIN Diode Shunt Switch Element Aeroflex
MSWSH-100-30 PIN Diode Shunt Switch Element Aeroflex Circuit Technology

Other Datasheets by MACOM Technology Solutions

Part Number Description
MSWSHC-050-10-CM35 PIN Diode Shunt Switch Element
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MSWSH-020-30 PIN Diode Shunt Switch Element
MSWSH-040-30 PIN Diode Shunt Switch Element
MSWSH-100-30 PIN Diode Shunt Switch Element

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MSWSHC-040-40 PIN Diode Shunt Switch Element Features  Supports up to 40 W Power  Low Insertion Loss: 0.2 dB @ 2.7 GHz 0.4 dB @ 8.0 GHz  High Isolation: 55 dB to 2.7 GHz  RoHS* Compliant Description A broadband, high linearity, medium power shunt switch element in a 2.6 x 1.5 mm DFN package. This PIN diode switch element is designed for wireless telecommunications infrastructure and test instrument applications. It is also suited for other applications in 0.05 ~ 10 GHz. Rev. V1 (2615) Molded Plastic DFN Electrical Specifications: TA = +25°C Parameter Breakdown Voltage (VB) Insertion Loss (IL) Isolation (ISO) Input / Output Return Loss (RL) Minority Carrier Lifetime (TL) Test Conditions IR = 10 µA VR = 50 V 2.3 - 2.7 GHz <6.0 GHz VR = -10 V 2.3 - 2.7 GHz <6.0 GHz IF = 100 mA 2.