MSS60-253-H30 diodes equivalent, extra high barrier silicon schottky diodes.
* VF, RD and CJ Matching Options
* Chip, Beam Lead and Packaged Devices
* Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS6.
The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode.
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