MNP0010 diode equivalent, silicon nip diode.
* Rugged Construction
* Fully Passivated
* Low Leakage
* Available in Both Chip and Package Styles
* Screening per MIL-PRF-19500 and MIL-PRF-
38534 Av.
The MNP0010 is a silicon NIP diode that features a fully passivated mesa construction for low leakage and reliability.
Rev. V2
Electrical Specifications: TC = +25°C
Parameter
Test Conditions
Voltage Breakdown
Junction Capacitance DIE Package (C1.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 545.87KB)