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MAVR-000120-1411 - Solderable GaAs Constant Gamma Flip-Chip Varactor Diode

Download the MAVR-000120-1411 datasheet PDF. This datasheet also covers the MAVR-000120-1411-MA variant, as both devices belong to the same solderable gaas constant gamma flip-chip varactor diode family and are provided as variant models within a single manufacturer datasheet.

General Description

The MAVR-000120-1411 is a gallium arsenide flip chip hyperabrupt varactor diode.

This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.

Key Features

  • Usable Past 70 GHz.
  • Constant Gamma for Linear Tuning.
  • Low Parasitic Capacitance.
  • High Q.
  • Silicon Nitride Passivation.
  • Polyimide Scratch Protection.
  • Surface Mount Configuration.
  • Lead Free (RoHS Compliant).
  • Available in Pocket Tape and Reel.
  • Can withstand 500 Temperature Cycles (-65°C to +150°C), mounted with 96.5 Sn/3.5 Ag solder without Mechanical Degradation.
  • Can be Mounted with Solder or Conduc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAVR-000120-1411-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Solderable GaAs Constant Gamma Flip-Chip Varactor Diode Features • Usable Past 70 GHz • Constant Gamma for Linear Tuning • Low Parasitic Capacitance • High Q • Silicon Nitride Passivation • Polyimide Scratch Protection • Surface Mount Configuration • Lead Free (RoHS Compliant) • Available in Pocket Tape and Reel • Can withstand 500 Temperature Cycles (-65°C to +150°C), mounted with 96.5 Sn/3.5 Ag solder without Mechanical Degradation. • Can be Mounted with Solder or Conductive Epoxy Description The MAVR-000120-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.