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MADP-011104 - High Power Shunt PIN Diode

Download the MADP-011104 datasheet PDF. This datasheet also covers the MADP-011104-MA variant, as both devices belong to the same high power shunt pin diode family and are provided as variant models within a single manufacturer datasheet.

General Description

The MADP-011104 is a high-power PIN diode assembled in a lead-free 3 mm 12-lead QFN plastic package.

This shunt device provides exceptional switch or attenuator performance from 50 MHz to 5 GHz.

Key Features

  • 350 W CW Incident Power Handling @ 3 GHz.
  • 0.15 dB Insertion Loss @ 3 GHz.
  • 29 dB Isolation @ 3 GHz.
  • Lead-Free 3 mm 12-lead QFN Package.
  • Halogen-Free “Green” Mold Compound.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MADP-011104-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MADP-011104 High Power Shunt PIN Diode 50 MHz - 5 GHz Features  350 W CW Incident Power Handling @ 3 GHz  0.15 dB Insertion Loss @ 3 GHz  29 dB Isolation @ 3 GHz  Lead-Free 3 mm 12-lead QFN Package  Halogen-Free “Green” Mold Compound  RoHS* Compliant Description The MADP-011104 is a high-power PIN diode assembled in a lead-free 3 mm 12-lead QFN plastic package. This shunt device provides exceptional switch or attenuator performance from 50 MHz to 5 GHz. This compact device is ideally suited to switch and attenuator applications from HF through S band, where higher peak and CW power, lower loss, and higher linearity surface-mount diode assemblies are required.