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MADP-011104 Datasheet Preview

MADP-011104 Datasheet

High Power Shunt PIN Diode

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MADP-011104
High Power Shunt PIN Diode
50 MHz - 5 GHz
Features
350 W CW Incident Power Handling @ 3 GHz
0.15 dB Insertion Loss @ 3 GHz
29 dB Isolation @ 3 GHz
Lead-Free 3 mm 12-lead QFN Package
Halogen-Free “Green” Mold Compound
RoHS* Compliant
Description
The MADP-011104 is a high-power PIN diode
assembled in a lead-free 3 mm 12-lead QFN plastic
package. This shunt device provides exceptional
switch or attenuator performance from 50 MHz to 5
GHz.
This compact device is ideally suited to switch and
attenuator applications from HF through S band,
where higher peak and CW power, lower loss, and
higher linearity surface-mount diode assemblies are
required.
Ordering Information1,2
Part Number
MADP-011104-TR500
MADP-011104-TR3000
Package
500 Piece Tape and Reel
3000 Piece Tape and Reel
MADP-011104-000SMB
Sample Board
1. Reference Application Note M513 for reel size information
2. All sample boards include 5 loose parts.
Functional Schematic
N/C N/C N/C
12 11 10
Rev. V1
RF1 1
RF1 2
N/C 3
9 RF2
8 RF2
7 N/C
4 56
N/C N/C N/C
Pin Configuration3
Pin #
Function
1, 2 RF1
3 - 7, 10 - 12
N/C
8, 9
Paddle4
RF2
Ground
3. MACOM recommends connecting unused package pins to
ground.
4. The exposed pad centered on the package bottom must be
connected to RF, DC and thermal ground.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0015052




MA-COM

MADP-011104 Datasheet Preview

MADP-011104 Datasheet

High Power Shunt PIN Diode

No Preview Available !

MADP-011104
High Power Shunt PIN Diode
50 MHz - 5 GHz
Electrical Specifications: TA = +25°C, Z0 = 50 Ω
Parameter
Test Conditions
Insertion Loss
-40 V, 3 GHz
Isolation
+100 mA, 3 GHz
Return Loss
-40 V, 3 GHz
Forward Voltage, VF
+100 mA
Reverse Leakage, IR
Shunt Capacitance, CT
Shunt Resistance, RS
Thermal Resistance, RthJC
-800 V
-40 V, 15 MHz
-40 V, 3 GHz
+10 mA, 3 GHz
+50 mA, 3 GHz
+100 mA, 3 GHz
+85°C, 3 GHz
Carrier Lifetime, TL
IF = +10 mA, IR = -6 mA
Rev. V1
Units
dB
dB
dB
V
nA
pF
Min.
27
ohm
°C/W
µs
Typ.
0.15
29
21
0.91
6
0.45
0.40
2.21
1.08
0.95
10
2
Max.
Absolute Maximum Ratings5,6,7
Parameter
CW Incident Power8
-40 V, 3 GHz @ +85°C
CW Incident Power8
+100 mA, 3 GHz @ +85°C
DC Forward Current
Absolute Maximum
350 W
45 W
250 mA
DC Reverse Voltage
Junction Temperature8
Operating Temperature
Storage Temperature
|-800 V|
+175°C
-40°C to +85°C
-55°C to +150°C
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. MACOM does not recommend sustained operation near these
survivability limits.
7. Power levels specified are for cold switching. MACOM
recommends cold switching only.
8. Operating at nominal conditions with TJ ≤ +175°C will ensure
MTTF > 1 x 106 hours.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these HBM Class 1C
and CDM Class C5 devices.
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0015052


Part Number MADP-011104
Description High Power Shunt PIN Diode
Maker MA-COM
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