MAAM26100
GaAs MMIC Power Amplifier
2.0 - 6.5 GHz
Features
Saturated Power: 30.5 dBm Typical
Gain: 19 dB Typical
Power Added Efficiency: 30%
On-Chip Bias Network
DC Decoupled RF Input and Output
RoHS* Compliant
Description
The MAAM26100 is a GaAs MMIC two stage high
efficiency power amplifier. The MAAM26100 is a
fully monolithic design which eliminates the need for
external circuitry in 50-ohm systems.
The MAAM26100 is ideally suited for driver
amplifiers and transmitter outputs in UMTS
applications, test equipment, electronic warfare
jammers, missile subsystems and phased array
radars.
The MAAM26100 is fabricated using a
mature 0.5-micron gate length GaAs process. The
process features full passivation for increased
performance reliability.
Ordering Information
Part Number
MAAM26100
Package
Die
Rev. V7
Die
Absolute Maximum Ratings 1,2
Parameter
VDD
VG1, VG2
VGG3
RF Input Power
Channel Temperature
Storage Temperature
Absolute Maximum
+9 V
-2.5 V to -0.8 V
-6 V to -3 V
+17 dBm
150°C
-65°C to +150°C
1. Exceeding any one or combination of these limits may cause
permanent damage to this device and will void product
warranty.
2. M/A-COM does not recommend sustained operation near
these survivability limits.
3. VGG rating applies when using the optional on-chip resistor
network.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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