MA4SW410B-1 Datasheet | MACOM Technology Solutions

HMIC™ Silicon SP4T PIN Diode Switch with Integrated Bias Network Features - Broad Bandwidth Specified up to 18 GHz - Usable up to 26 GHz - Integrated Bias Network - Low Insertion Loss / High Isolation - Fully Monolithic, Glass Encapsulated Chip - Ro HS- pliant Description The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing MA's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this bination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 -...