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MA4SW110 Datasheet Preview

MA4SW110 Datasheet

Silicon PIN Diode Switches

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MA4SWx10 Series
HMIC™ Silicon PIN Diode Switches
Features
Broad Bandwidth
Specified from 50 MHz to 20 GHz
Usable from 50 MHz to 26.5 GHz
Lower Insertion Loss / Higher Isolation
Fully Monolithic, Glass Encapsulated Chip
Up to +33 dBm CW Power Handling @ +25°C
RoHS* Compliant
Description
The MA4SW110 (SPST), MA4SW210 (SPDT) and
MA4SW310 (SP3T) are series-shunt, broadband,
PIN diode switches made with MACOM’s HMICTM
(Heterolithic Microwave Integrated Circuit) process.
This process allows the silicon pedestals which form
the series - shunt diodes and vias to be embedded
into low loss, low dispersion glass. By also
incorporating small spacing between circuit
elements, the result is an HMIC chip with low
insertion loss and high isolation at frequencies up to
26.5 GHz.
They are designed for use as moderate power, high
performance switches and provide superior
performance when compared to similar designs that
use discrete components.
The top side of the chip is protected by a polymer
coating for manual or automatic handling and large
gold bond pads help facilitate connection of low
inductance ribbons. The gold metallization on the
backside of the chip allows for attachment via 80/20,
gold/tin solder or conductive silver epoxy.
Functional Diagrams
J1
Rev. V11
J2
MA4SW110 (SPST)
J2 J3
J1
MA4SW210 (SPDT)
J3
Ordering Information
Part Number
MA4SW110
MA4SW210
MA4SW310
Package
Gel Pack
Gel Pack
Gel Pack
J2 J4
J1
MA4SW310 (SP3T)
*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

MA4SW110 Datasheet Preview

MA4SW110 Datasheet

Silicon PIN Diode Switches

No Preview Available !

MA4SWx10 Series
HMIC™ Silicon PIN Diode Switches
Rev. V11
Electrical Specifications: TA = 25°C, 20 mA
MA4SW110 (SPST)
Parameter
Insertion Loss
Isolation
Input Return Loss
Switching Speed1
Voltage Rating2
Signal Compression
Test Conditions
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
500 mW, 1 GHz
Units
dB
dB
dB
ns
V
dB
Min.
46
39
34
22
15
14
Typ.
0.4
0.5
0.7
55
47
42
31
33
27
50
0.2
Max.
0.7
0.9
1.2
50
MA4SW210 (SPDT)
Parameter
Insertion Loss
Isolation
Input Return Loss
Switching Speed1
Voltage Rating2
Signal Compression
Test Conditions
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
500 mW, 1 GHz
Units
dB
dB
dB
ns
V
dB
Min.
48
40
34
20
18
15
Typ.
0.4
0.5
0.7
63
50
42
27
25
25
50
0.2
Max.
0.7
1.0
1.2
50
MA4SW310 (SP3T)
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
Isolation
Input Return Loss
Switching Speed1
Voltage Rating2
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
0.5 0.8
dB 0.7 1.1
0.9 1.5
49 57
dB 42 48
33 42
20 24
dB 14 22
11 21
ns 50
V — — 50
Signal Compression
500 mW, 1 GHz
dB 0.2
1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the
modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an
RC network using the following values: R = 50 - 200 Ω, C = 390 - 1000 pF. Driver spike current, IC = C dv/dt, ratio of spike current to steady
state current, is typically 10:1.
2 2. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10 µA maximum at -50 volts.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number MA4SW110
Description Silicon PIN Diode Switches
Maker MA-COM
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MA4SW110 Datasheet PDF






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