MA4Exxxx Series
GaAs Flip Chip
Schottky Barrier Diodes
Features
Low Series Resistance
Low Capacitance
High Cutoff Frequency
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Easy Circuit Insertion
Rev. V11
MA4E1317
Description and Applications
The MA4E1317 single, MA4E1318 anti-parallel pair,
MA4E1319-1 reverse tee, MA4E1319-2 series tee
and MA4E2160 unconnected anti-parallel pair are
gallium arsenide flip chip Schottky barrier diodes.
These devices are fabricated on OMCVD epitaxial
wafers using a process designed for high device
uniformity and extremely low parasitics. The diodes
are fully passivated with silicon nitride and have an
additional layer of polyimide for scratch protection.
The protective coatings prevent damage to the
junction during automated or manual handling. The
flip chip configuration is suitable for pick and place
insertion. The high cutoff frequency of these diodes
allows use through millimeter wave frequencies.
Typical applications include single and double
balanced mixers in PCN transceivers and radios,
police radar detectors, and automotive radar
detectors. The devices can be used through
80 GHz.
MA4E1318
MA4E1319 -1
The MA4E1318 anti-parallel pair is designed for use
in sub harmonically pumped mixers. Close
matching of the diode characteristics results in high
LO suppression at the RF input.
MA4E1319 - 2
Ordering Information
Part Number
Package
MA4E1317
100 piece Gel Pack
MADS-001317-1278HP 3000 piece Pocket Tape on Reel
MA4E1318
100 piece Gel Pack
MADS-001318-1197HP 3000 piece Pocket Tape on Reel
MA4E1319-1
MA4E1319-2
100 piece Gel Pack
100 piece Gel Pack
MA4E2160
MA4E2160
1
100 piece Gel Pack
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006068
