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MA4E1318 - GaAs Flip Chip Schottky Barrier Diodes

Download the MA4E1318 datasheet PDF (MA4E1317-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for gaas flip chip schottky barrier diodes.

Description

The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes.

Features

  • Low Series Resistance.
  • Low Capacitance.
  • High Cutoff Frequency.
  • Silicon Nitride Passivation.
  • Polyimide Scratch Protection.
  • Designed for Easy Circuit Insertion.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4E1317-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by MA-COM
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Full PDF Text Transcription

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GaAs Flip Chip Schottky Barrier Diodes Features • Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Designed for Easy Circuit Insertion Description and Applications The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling.
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