900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MA-COM

MA4E1310 Datasheet Preview

MA4E1310 Datasheet

GaAs Flip Chip Schottky Barrier Diode

No Preview Available !

MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Features
Low Series Resistance
Low Capacitance
High Cutoff Frequency
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Easy Circuit Insertion
Description
M/A-COM's MA4E1310 is a gallium arsenide flip
chip Schottky barrier diode. This diode is fabri-
cated on a OMCVD epitaxial wafer using a proc-
ess designed for high device uniformity and ex-
tremely low parasitics. This device is fully pas-
sivated with silicon nitride and has an additional
layer of polyimide for scratch protection. The
protective coatings prevent damage to the junc-
tion during automated or manual handling. The
flip chip configuration is suitable for pick and
place insertion.
Applications
The high cutoff frequency of this diode allows
use through millimeter wave frequencies. Typi-
cal applications include single and double bal-
anced mixers in PCN transceivers and radios,
police radar detectors, automotive radar detec-
tors, etc. This device can be used through 110
GHz.
.
Rev. V4
Case Style ODS-1278
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

MA4E1310 Datasheet Preview

MA4E1310 Datasheet

GaAs Flip Chip Schottky Barrier Diode

No Preview Available !

MA4E1310
GaAs Flip Chip Schottky Barrier Diode
Rev. V4
Electrical Specifications @ + 25 °C
Parameters and Test Conditions
Junction Capacitance at 0V at 1 MHz
Total Capacitance at 0V at 1 MHz1
Slope Resistance 2
Forward Voltage at 1mA
Reverse Breakdown Voltage at @ 10uA
SSB Noise Figure ( Estimated )
Symbol
Cj
Ct
Rd
Vf1
Vbr
NF
Units
pF
pF
Ohms
Volts
Volts
dB
MA4E1310
Min. Typ. Max.
.010
.025
.040
.045
79
.60 .70 .80
4.5 7
6.5
Notes:
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Slope Resistance = ( Vf1 - Vf2) / (10.5mA - 9.5mA)
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number MA4E1310
Description GaAs Flip Chip Schottky Barrier Diode
Maker MA-COM
PDF Download

MA4E1310 Datasheet PDF






Similar Datasheet

1 MA4E1310 GaAs Flip Chip Schottky Barrier Diode
MA-COM
2 MA4E1317 (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes
Tyco Electronics
3 MA4E1317 GaAs Flip Chip Schottky Barrier Diodes
MA-COM
4 MA4E1318 (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes
Tyco Electronics
5 MA4E1318 GaAs Flip Chip Schottky Barrier Diodes
MA-COM
6 MA4E1319-1 (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes
Tyco Electronics
7 MA4E1319-1 GaAs Flip Chip Schottky Barrier Diodes
MA-COM
8 MA4E1319-2 (MA4E1317 - MA4E1319) GaAs Flip Chip Schottky Barrier Diodes
Tyco Electronics
9 MA4E1319-2 GaAs Flip Chip Schottky Barrier Diodes
MA-COM





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy