MA4E1310
Description
M/A-COM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics.
Key Features
- Low Series Resistance
- Low Capacitance
- High Cutoff Frequency
- Silicon Nitride Passivation
- Polyimide Scratch Protection
- Designed for Easy Circuit Insertion
