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MA4E1310 Datasheet GaAs Flip Chip Schottky Barrier Diode

Manufacturer: MACOM Technology Solutions

Download the MA4E1310 datasheet PDF. This datasheet also includes the MA4E1310-MA variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MA4E1310-MA-COM.pdf) that lists specifications for multiple related part numbers.

General Description

M/A-COM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode.

This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics.

This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection.

Overview

MA4E1310 GaAs Flip Chip Schottky Barrier Diode.

Key Features

  • Low Series Resistance.
  • Low Capacitance.
  • High Cutoff Frequency.
  • Silicon Nitride Passivation.
  • Polyimide Scratch Protection.
  • Designed for Easy Circuit Insertion.

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