MA4E1310 datasheet, diode equivalent, MA-COM

Features and benefits

* Low Series Resistance
* Low Capacitance
* High Cutoff Frequency
* Silicon Nitride Passivation
* Polyimide Scratch Protection
* Designed for Easy.

Application

The high cutoff frequency of this diode allows use through millimeter wave frequencies. Typical applications include sin.

Description

M/A-COM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with sili.

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