MA4AGBLP912 datasheet, diode equivalent, MA-COM

Features and benefits

* Low Series Resistance
* Low Capacitance
* 5 Nanosecond Switching Speed
* Can be Driven by a Buffered +5 V TTL
* Silicon Nitride Passivation
* Po.

Application

* Aerospace & Defense
* ISM Description The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead.

Description

The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is.

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