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MA4AGBLP912 Datasheet Preview

MA4AGBLP912 Datasheet

AlGaAs Beamlead PIN Diode

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MA4AGBL912
AlGaAs Beamlead PIN Diode
Features
Low Series Resistance
Low Capacitance
5 Nanosecond Switching Speed
Can be Driven by a Buffered +5V TTL
Silicon Nitride Passivation
Polyimide Scratch Protection
RoHS Compliant
Description
M/A-COM Technology Solutions MA4AGBLP912 is
an Aluminum-Gallium-Arsenide anode enhanced,
beam lead PIN diode. AlGaAs anodes, which utilize
M/A-COM Tech’s patented hetero-junction
technology, produce less diode “On” resistance than
conventional GaAs or silicon devices. This device is
fabricated in a OMCVD system using a process
optimized for high device uniformity and extremely
low parasitics. The result is a diode with low series
resistance, 4Ω, low capacitance, 28fF, and an
extremely fast switching speed of 5nS. It is fully
passivated with silicon nitride and has an additional
polymer coating for scratch protection. The
protective coating prevents damage to the junction
and the anode air bridges during handling and as-
sembly.
Applications
The ultra low capacitance of the MA4AGBLP912
device makes it ideally suited for use up to 40GHz
when used in a shunt configuration. The low RC
product and low profile of the beamlead PIN diode
allows for use in microwave switch designs, where
low insertion loss and high isolation are required.
The operating bias conditions of +10mA for the low
loss state, and 0V, for the isolation state permits the
use of a simple +5V TTL gate driver. AlGaAs,
beamlead diodes, can be used in switching arrays
on radar systems, high speed ECM circuits, optical
switching networks, instrumentation, and other
wideband multi-throw switch assemblies.
Topside
Rev. V5
Bottom
Absolute Maximum Ratings @ TAMB = 25°C
(unless otherwise specified)
Parameter
Absolute Maximum
Reverse Voltage
-50V
Operating Temperature
-65°C to +125°C
Storage Temperature
-65°C to +150°C
Junction Temperature
+175°C
Forward DC Current
40mA
C.W. Incident Power
+23dBm
Mounting Temperature +235°C for 10 seconds
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

MA4AGBLP912 Datasheet Preview

MA4AGBLP912 Datasheet

AlGaAs Beamlead PIN Diode

No Preview Available !

MA4AGBL912
AlGaAs Beamlead PIN Diode
Rev. V5
Electrical Specifications at TAMB = 25°C
Test Conditions
Total Capacitance @ 5V/1 MHz
Forward Resistance @ +20mA/1 GHz
Forward Voltage at +10mA
Leakage Current at 40 V
Minority Carrier Lifetime
Parameters
Ct
Rs
Vf
Ir
TL
Units
fF
Ohms
Volts
nA
nS
Min
1.2
Typical
26
4
1.36
50
5
Max.
30
4.9
1.5
300
10
INCHES
MM
DIM MIN. MAX. MIN. MAX.
A
0.009
0.013
0.2286 0.3302
B 0.0049 0.0089 0.1245 0.2261
C 0.0037 0.0057 0.0940 0.1448
D 0.0049 0.0089 0.1245 0.2261
E
0.002
0.006
0.0508 0.1524
F 0.0218 0.0278 0.5537 0.70612
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number MA4AGBLP912
Description AlGaAs Beamlead PIN Diode
Maker MA-COM
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MA4AGBLP912 Datasheet PDF






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