MA4AGBLP912
Overview
The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices.
- Low Series Resistance
- Low Capacitance
- 5 Nanosecond Switching Speed
- Can be Driven by a Buffered +5 V TTL
- Silicon Nitride Passivation
- Polyimide Scratch Protection
- RoHS Compliant
