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MA4AGBLP912 - AlGaAs Beamlead PIN Diode

This page provides the datasheet information for the MA4AGBLP912, a member of the MA4AGBLP912-MA AlGaAs Beamlead PIN Diode family.

Description

The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode.

AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices.

Features

  • Low Series Resistance.
  • Low Capacitance.
  • 5 Nanosecond Switching Speed.
  • Can be Driven by a Buffered +5 V TTL.
  • Silicon Nitride Passivation.
  • Polyimide Scratch Protection.
  • RoHS Compliant.

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Datasheet preview – MA4AGBLP912

Datasheet Details

Part number MA4AGBLP912
Manufacturer MACOM
File Size 318.28 KB
Description AlGaAs Beamlead PIN Diode
Datasheet download datasheet MA4AGBLP912 Datasheet
Additional preview pages of the MA4AGBLP912 datasheet.

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Full PDF Text Transcription

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AlGaAs Beamlead PIN Diode Features • Low Series Resistance • Low Capacitance • 5 Nanosecond Switching Speed • Can be Driven by a Buffered +5 V TTL • Silicon Nitride Passivation • Polyimide Scratch Protection • RoHS Compliant Applications • Aerospace & Defense • ISM Description The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics. The result is a diode with low series resistance, 4 Ω, low capacitance, 28 fF, and an extremely fast switching speed of 5nS.
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