MA4AGBL912 datasheet, diode equivalent, MA-COM

Features and benefits

 Low Series Resistance  Low Capacitance  5 Nanosecond Switching Speed  Can be Driven by a Buffered +5V TTL  Silicon Nitride Passivation  Polyimide Scratch Protectio.

Description

M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs o.

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